Giesecke, Johannes AJohannes AGieseckeSchubert, Martin C.Martin C.SchubertWarta, WilhelmWilhelmWarta2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/23009010.1063/1.4752722This paper presents a class of methods to determine net dopant concentration of silicon wafers by means of dynamic or quasi-steady-state photoluminescence. In contrast to resistivity measurements, this approach is independent of assumptions about dopant type and majority carrier mobility. The latter fact makes it particularly interesting for the determination of net dopant concentration in compensated silicon, where conventional mobility models involving only one dopant species have been reported to fail. Our approach also allows access to majority carrier mobility via combination of net dopant concentration as inferred from photoluminescence with a resistivity measurement.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienMesstechnik und ProduktionskontrolleCharakterisierungZellen und Module621530journal article