Klos, M.M.KlosBartholdt, R.R.BartholdtKlier, J.J.KlierLampin, J.-F.J.-F.LampinBeigang, R.R.Beigang2022-03-132022-03-132015https://publica.fraunhofer.de/handle/publica/39267610.1109/IRMMW-THz.2015.7327851We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon substrates for terahertz (THz) detection and generation. The PCAs consist of 2 mu m thick layers of LT GaAs bonded on a high resistivity silicon substrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole length between 20 mu m and 60 mu m a maximum bandwidth above 10 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 5 mu W at a repetition rate of 80 MHz.enconference paper