Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films

Lehninger, DavidDavidLehningerSünbül, AyseAyseSünbülSeidel, KonradKonradSeidelLederer, MaximilianMaximilianLederer2024-09-182024-09-182024https://publica.fraunhofer.de/handle/publica/47525610.1002/pssa.2023007122-s2.0-85184690649enopen accesscoercive fieldsenergy efficiencyferroelectricshafnium oxidememoriesToward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Filmsjournal article