Evanschitzky, PeterPeterEvanschitzkyShao, FengFengShaoErdmann, AndreasAndreasErdmann2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23446610.1117/1.JMM.12.2.021005This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.enjournal article