Under CopyrightEvanschitzky, PeterPeterEvanschitzkyShao, FengFengShaoFühner, TimTimFühnerErdmann, AndreasAndreasErdmann2022-03-1124.2.20122011https://publica.fraunhofer.de/handle/publica/37316410.1117/12.879207Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.enlithography simulationmask topography effectwavefront aberrationsprocess optimization670conference paper