Dietz, R.J.B.R.J.B.DietzWilk, R.R.WilkGlobisch, B.B.GlobischRoehle, H.H.RoehleStanze, D.D.StanzeUllrich, S.S.UllrichSchumann, S.S.SchumannBorn, N.N.BornKoch, M.M.KochSartorius, B.B.SartoriusSchell, M.M.Schell2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23225210.1007/s10762-013-9968-4We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material's relaxation time constants.en621535journal article