Möhrle, M.M.MöhrleFeister, U.U.FeisterHörer, J.J.HörerMolt, R.R.MoltSartorius, B.B.Sartorius2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18243810.1109/68.157120Self-pulsation in InGaAsP/InP multisection distributed feedback (DFB) lasers was generated reproducibly by adjusting appropriate injection conditions. Frequencies of up to some gigahertz were achieved. It was demonstrated that-in contrast to Fabry-Perot (FP) elements-no selective treatment of one section is required for creating the self-pulsation. It is concluded that the self-pulsation in DFB elements is of a different type than in FP elements.endistributed feedback lasersgallium arsenidegallium compoundsiii-v semiconductorsindium compoundssemiconductor lasersirsemiconductor laser diodesself-pulsationwavelength multisection dfb lasersdistributed feedbackinjection conditions1.5 micronInGaAsP-InP621535journal article