Bivour, MartinMartinBivourMeinhardt, C.C.MeinhardtPysch, D.D.PyschReichel, ChristianChristianReichelRitzau, Kurt-UlrichKurt-UlrichRitzauHermle, MartinMartinHermleGlunz, Stefan W.Stefan W.Glunz2022-03-119.8.20122010https://publica.fraunhofer.de/handle/publica/36863110.24406/publica-r-36863110.1109/PVSC.2010.5614252We present the first silicon solar cells processed at Fraunhofer ISE featuring an amorphous/crystalline silicon heterojunction rear emitter and a diffused front surface field. In this work, we focus on the optimization of the silicon heterojunction rear emitter of n-type silicon solar cells with regards to the intrinsic hydrogenated amorphous silicon a-Si:H(i) and boron-doped hydrogenated amorphous silicon a-Si:H(p) layer thickness and the influence of a transparent conducting oxide layer on the rear emitter surface. Efficiencies up to 19.1% (Voc = 687 mV, Jsc = 34.9 mA/cm2, FF = 79.9%) have been reached for non-textured solar cells on n-type absorbers. Furthermore, we attained an efficiency of 19.8% on textured p-type absorbers featuring an amorphous/crystalline silicon heterojunction rear emitter.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikOberflächen - KonditionierungPassivierungLichteinfangHerstellung und Analyse von hocheffizienten SolarzellenIndustrielle und neuartige Solarzellenstrukturen621697conference paper