Najafidehaghani, E.E.NajafidehaghaniGan, Z.Z.GanGeorge, A.A.GeorgeLehnert, T.T.LehnertNgo, G.Q.G.Q.NgoNeumann, C.C.NeumannBucher, T.T.BucherStaude, I.I.StaudeKaiser, D.D.KaiserVogl, T.T.VoglHübner, U.U.HübnerKaiser, U.U.KaiserEilenberger, F.F.EilenbergerTurchanin, A.A.Turchanin2022-03-062022-03-062021https://publica.fraunhofer.de/handle/publica/26867410.1002/adfm.202101086Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p-n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p-n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p-n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.en2D deviceslateral heterostructureslight-emitting diodep-n junctiontransition metal dichalcogenides monolayers620541journal article