Schermer, SebastianSebastianSchermerHelke, ChristianChristianHelkeSong, DanheDanheSongReuter, DannyDannyReuterKuhn, HaraldHaraldKuhn2023-07-282023-07-282022https://publica.fraunhofer.de/handle/publica/44623310.1109/SSI56489.2022.99014372-s2.0-85140905609In this paper, we are using high-resolution projection lithography together with AZ 10XT thick photoresist to realize an etching mask, which can be used for deep reactive ion etching (DREE). With a design of experiment (DoE) suitable parameters for a full wafer level process are investigated. Structures with different size from 0.5 μm to 5 urn are used to find the highest aspect ratios for MEMS-applications.enAZ 10XThigh aspect ratioprojection lithographythick photoresistconference paper