Under CopyrightBrand, AndreasAndreasBrandKnorz, AnneroseAnneroseKnorzZeidler, RalfRalfZeidlerNekarda, Jan F.Jan F.NekardaPreu, RalfRalfPreu2022-03-1224.4.20132012https://publica.fraunhofer.de/handle/publica/37842510.1117/12.930491This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikIndustrielle und neuartige Solarzellenstrukturen621697Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfacesconference paper