Falidas, Konstantinos EfstathiosKonstantinos EfstathiosFalidasMertens, KonstantinKonstantinMertensEverding, MaximilianMaximilianEverdingCzernohorsky, MalteMalteCzernohorskyHeitmann, J.J.Heitmann2023-09-122023-09-122023https://publica.fraunhofer.de/handle/publica/45052510.1109/VLSI-TSA/VLSI-DAT57221.2023.101343462-s2.0-85162965878A material, electrical and reliability study of MIM decoupling capacitors placed in the BEOL of 300mm wafers using Al 2 O 3 -doped ZrO 2 dielectric thin films is reported. By using two aluminum contents (7.8% and 13.1%) within thin (<10nm) ZrO 2 dielectric films, the capacitance density of up to 25.7 fF/μm2 with field linearity of 592 ppm/(MV/cm)2 at 10kHz was achieved. J-E curves and dielectric breakdown characteristics at temperatures from 25°C to 150°C were investigated. Low leakage current (<0.1μA/cm2) was achieved up to 200°C for both Al contents. Further, reliability measurements were carried out over temperature (25-175°C). Capacitors reached more than 300 years of extrapolated lifetime for the 13.1% Al content within ZrO 2 at 150°C and up to more than 400 years of lifetime for both Al contents at 25°C.enconference paper