Weber, JulianJulianWeberLohmüller, SabrinaSabrinaLohmüllerLohmüller, ElmarElmarLohmüllerWasmer, SvenSvenWasmerNekarda, JanJanNekardaBrand, AndreasAndreasBrand2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/40471110.1109/PVSC.2018.8547311Simulation results concerning laser-doped selective emitters (LDSE) for the phosphorous doped front side of passivated emitter and rear solar cells are presented. We introduce a formula for different emitter doping profiles to study the influence on the dark saturation current density at the emitter-metal interface j 0e,met . It is shown that j 0e,met can be reduced by deep and heavily-doped LDSEs. In addition, we report on how energy conversion efficiency can be predicted accounting for potential misalignment between LDSE and contact structures. As a result, we recommend avoiding the occurrence of non-laser-doped metallized areas. According to our simulation, energy conversion efficiency is increased by about 0.5%abs to 21.8% by implementing the LDSE.enPhotovoltaikSilicium-PhotovoltaikDotierung und DiffusionKontaktierung und StrukturierungPilotherstellung von industrienahen Solarzellenselective emitter (LDSE)rear and emitter solar cell (PERC)simulationsdoping profile621697conference paper