Schnattinger, T.T.SchnattingerBär, E.E.BärErdmann, A.A.Erdmann2022-03-102022-03-102006https://publica.fraunhofer.de/handle/publica/35087610.1016/j.mee.2006.01.121With shrinking feature sizes in lithography, molecular level phenomena such as line edge roughness have an increasingly important impact on process performance. The critical ionization model provides a molecular understanding of the resist development process that follows the exposure and post exposure bake steps. Applied to simulation, a major drawback of the critical ionization model is the vast increase in computing time required. This paper presents a fast, event-based algorithm with self-adaptive time-steps for the discrete simulation of the development process. Its additional advantage compared to previously employed time-step based algorithms is that it is free of numerical errors that result from the discretization of the simulated development time into fixed time-steps.enresist developmentmolecular simulationcritical ionization modelefficiencynumerical accuracy670620530A fast development simulation algorithm for discrete resist modelsconference paper