Badr, ElieElieBadrPichler, PeterPeterPichlerSchmidt, GerhardGerhardSchmidt2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38396010.4028/www.scientific.net/SSP.205-206.260Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.enDLTSplatinumhydrogensilicon670620530conference paper