Chkhalo, N.I.N.I.ChkhaloGarakhin, S.A.S.A.GarakhinGolubev, S.V.S.V.GolubevLopatin, A.Y.A.Y.LopatinNechay, A.N.A.N.NechayPestov, A.E.A.E.PestovSalashchenko, N.N.N.N.SalashchenkoToropov, M.N.M.N.ToropovTsybin, N.N.N.N.TsybinVodopyanov, A.V.A.V.VodopyanovYulin, S.S.Yulin2022-03-052022-03-052018https://publica.fraunhofer.de/handle/publica/25672010.1063/1.5016471We present the results of investigations of extreme ultraviolet (EUV) light emission in the range from 5 to 10 nm. The light source was a pulsed ""double-stream"" Xe:He gas jet target irradiated by a laser beam with a power density of ∼1011 W/cm2. The radiation spectra were measured with a Czerny-Turner monochromator with a plane diffraction grating. The conversion efficiency of the laser energy into EUV radiation caused by Xe+14EL+16 ion emission in the range of 6-8 nm was measured using a calibrated power meter. The conversion efficiency of the laser radiation into EUV in the vicinity of 6.7 nm was (2.17 ± 0.13)% in a 1 nm spectral band. In the spectral band of the real optical system (0.7% for La/B multilayer mirrors) emitted into the half-space, it was (0.1 ± 0.006)%. The results of this study provide an impetus for further research on laser plasma sources for maskless EUV lithography at a wavelength of 6.7 nm.en620621journal article