Kilian, BorjaBorjaKilianGleichauf, JonasJonasGleichaufManiar, YoussefYoussefManiarWittler, OlafOlafWittlerSchneider-Ramelow, MartinMartinSchneider-Ramelow2023-09-282023-09-282023https://publica.fraunhofer.de/handle/publica/45110910.1109/EuroSimE56861.2023.101007942-s2.0-85158141855Many of the reliability methods used in power electronics require extensive experimental data, resulting in long product design cycles. This work focuses on developing a simulation-driven approach to assess the reliability of a discrete silicon carbide MOSFET by monitoring 2nd level solder degradation under power cycling in the thermal and thermo-mechanical domains. Active power cycling tests are performed to determine the loading condition at which end-of-life is reached due to a 20% increase in thermal resistance. Numerical analysis using finite element simulations is conducted to gain a physical understanding of the failure criterion from a mechanical point of view. The proposed methodology aims to accelerate the quality assurance and product qualification processes of discrete power electronic devices.enconference paper