Shin, N.N.ShinKon, M.M.KonSong, P.K.P.K.SongShigesato, Y.Y.ShigesatoFrach, P.P.FrachKojima, H.H.KojimaSuzuki, K.K.SuzukiUtsumi, K.K.Utsumi2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/335949Sn-doped In2O3 (ITO) films were deposited by dual magnetron sputtering (DMS) system using twin high density ITO oxide targets at substrate temperature (Ts) of RT and 300°C under Ar + O2 gas pressure of 1.0 Pa. No nodules or defects were observed on the target surface after 3000 W, 100 h deposition implying the outstanding micro-arc free and long term process stability. The DMS is considered to have very high potential for the stable, high-power density and high-deposition rate sputtering processes using oxide targets.en667670620conference paper