Tietzel, K.K.TietzelBurenkov, A.A.BurenkovLorenz, J.J.LorenzRyssel, H.H.Ryssel2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/327000With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason, within the project PROMPT a multidimensional process simulation software capable to provide appropriate input to three-dimensional device simulation has been developed by a European consortium. The PROMPT software compiles the geometry and the dopant profiles of the device from the results of existing one- and two-dimensional process simulators and three-dimensional modules newly developed. Within this presentation, the capabilities of the three-dimensional ion implantation module developed at FhG-IIS-B within PROMPT are being outlined.enanalytical methodanalytische MethodeHalbleitertechnologieion implantationIonenimplantationprocess simulationProzeßsimulationsemiconductor technology670620530conference paper