CC BY-NC-ND 4.0Kwapil, WolframWolframKwapilHammann, BenjaminBenjaminHammann2023-06-192023-06-192023Note-ID: 00007A26https://publica.fraunhofer.de/handle/publica/443010https://doi.org/10.24406/publica-150110.1002/solr.20220110710.24406/publica-1501Herein, effects related to reactions involving hydrogen during carrier injection at room temperature in boron-doped Czochralski-grown silicon wafers are investigated. It is shown that these conditions lead to boron-oxygen defect regeneration. Under these conditions, bulk material quality degradation induced by a dark annealing can be temporarily recovered in the same way as light and elevated temperature-induced degradation. Dissociation of boron-hydrogen pairs by carrier injection at room temperature is observed in parallel. These observations are discussed within the framework of known hydrogen reactions. With this study, significant aspects of hydrogen-related meta-stabilities at temperatures that are most relevant for solar modules in moderate climates are covered.ensiliconhydrogendegradationhydrogen reactionsjournal article