Döldissen, W.W.DöldissenFiedler, F.F.FiedlerKaiser, R.R.KaiserMörl, L.L.Mörl2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/17795310.1049/el:19890026A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55 mu m wavelength was achieved. The best diodes exhibited dark currents of 1 nA at -10 V bias voltage.engallium arsenideiii-v semiconductorsindium compoundsintegrated optoelectronicsliquid phase epitaxial growthoptical communication equipmentoptical waveguidesphotodiodessemiconductor technologysubstratesbutt coupled photodiodesphotodiodes integration to waveguidesoeicssemiconductorsy-branched optical waveguidesoptical y-branchphotodetective zoneGaInAs lpe growth refilling deep etched holesinternal quantum efficiencydark currentsbias voltage90 percent1.55 micron1 na-10 vGaInAs photodiodesInP substrate621384journal article