Nido, M.M.NidoAlexander, M.G.W.M.G.W.AlexanderRühle, W.W.W.W.RühleSchweizer, T.T.SchweizerKöhler, KlausKlausKöhler2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17893910.1063/1.1027832-s2.0-0000927043Nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by a semiclassical model. Additional efficient hole tunneling is observed in the 3 nm barrier sample, and the time constant is of the order of 50 ps.encoupled quantum wellsphotoluminescencequantum wellstime-resolved photoluminescencetunneling621667journal article