Erdmann, A.A.ErdmannFühner, T.T.FühnerEvanschitzky, P.P.EvanschitzkyNeumann, J.T.J.T.NeumannRuoff, J.J.RuoffGräupner, P.P.Gräupner2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38064110.1117/12.2011432This paper investigates the performance of different mask options for sub-13 nm EUV-lithography with a 4× demagnication and an NA of 0.45. The considered mask options include standard binary masks, standard attenuated phase-shift masks, etched attenuated phase-shift masks and embedded-shifter phase-shift masks. The lithographic performance of these masks is investigated and optimized in terms of mask efficiency, NILS, DoF, OPC-performance and telecentricity errors. A multiobjective optimization technique is used to identify the most promising mask geometry parameters.en670conference paper