Kreissl, J.J.KreisslMoehrle, M.M.MoehrleSigmund, A.A.SigmundBochnia, R.R.BochniaHarde, P.P.HardeUlrici, W.W.Ulrici2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/33673610.1109/ICIPRM.2000.8502522-s2.0-0033689477The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has been investigated. Evidence is provided that the (P-H Zn) complex is responsible for the passivation. The recovery of the hole concentration needs a reactivation energy of 1.05 eV. In spite of the passivation of the exposed p-InP areas during buried heterostructure laser contact stripe formation by RIE, the U-I characteristics are unaffected because inside the contact stripe remains a sufficiently large non-passivated p-InP channel.enhole densityhydrogeniii-v semiconductorsindium compoundspassivationsemiconductor laserssputter etchingzinchydrogen passivationindium phosphidereactive ion etchingcontact stripe formationzinc acceptorhole concentrationburied heterostructure laseri-v characteristicsimpurity complexactivation energy621conference paper