Duser, H.H.DuserFidorra, F.F.FidorraFranke, D.D.FrankeMohrle, M.M.MohrleRosenzweig, M.M.RosenzweigWolfram, P.P.WolframGrutzmacher, D.D.Grutzmacher2022-03-082022-03-081990https://publica.fraunhofer.de/handle/publica/318103The paper discusses long-wave MQW lasers for emissions in the range of 1.23 to 1.55 µm which have been produced as conventional InAsP/InP double heterostructures and the reasons for their relatively limited performance. The authors describe the technology of an alternative structure in which the InGaAs quantum wells are embedded in a InGaAsP material. Broad-area lasers using the ridge-guide principle are made and tested. The MQW separate confinement lasers have threshold current of 450 and 610 A/cm2 for 4 and 8 wells respectively, notably less than those of the best conventional heterostructures.engallium arsenidegallium compoundsiii-v semiconductorsindium compoundssemiconductor junction lasersbroad area laserssemiconductorslong-wave mqw lasersridge-guide principlemqw separate confinement lasersthreshold current1.23 to 1.55 micronInGaAs-InGaAsp multiquantum well lasersinasp-InP double heterostructure621conference paper