Hanus, V.V.HanusCsajbok, V.V.CsajbokPapa, Z.Z.PapaBudai, J.J.BudaiMarton, Z.Z.MartonKiss, G.Z.G.Z.KissSandor, P.P.SandorPaul, P.P.PaulSzeghalmi, A.A.SzeghalmiWang, Z.Z.WangBergues, B.B.BerguesKling, M.F.M.F.KlingMolnar, G.G.MolnarVolk, J.J.VolkDombi, P.P.Dombi2022-05-062022-05-062021https://publica.fraunhofer.de/handle/publica/41697510.1109/CLEO/Europe-EQEC52157.2021.9541888Solid-state devices capable to react on the sub-cycle evolution of optical fields can pave the way towards petahertz electronics or provide new diagnostic devices for few-cycle lasers [1]. Such devices might rely on an effect of a transient metallization of wide-bandgap materials demonstrated in dielectrics [2] and semiconductors [3]. The observation of optical current control so far has been limited to millijoule-class laser systems which hinders the development towards the miniaturization and mass availability of the potential devices as these high-pulse-energy systems are bulky and have low repetition rate. Here, we report on the transient metallization and CEP-driven current control induced in a compact setup at 80 MHz repetition rate in dielectric SiO 2, HfO 2 and semiconducting GaN with pJ-class pulses for the first time to our knowledge.en620conference paper