Su, L.M.L.M.SuSchroeter-Janssen, H.H.Schroeter-JanssenLi, K.C.K.C.LiGrote, N.N.Grote2022-03-022022-03-021985https://publica.fraunhofer.de/handle/publica/1731942-s2.0-0022134871A pnp double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, and offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the IC/VCE characteristics.enbipolar transistorsgallium arsenideiii-v semiconductorsindium compounds1 v offset voltagep-n-p typepnp typebipolar transistordouble-heterostructureInGaAsP/inpbilateral operationemitter-up configuration621384journal article