Lohmüller, ElmarElmarLohmüllerLohmüller, SabrinaSabrinaLohmüllerNorouzi, M.H.M.H.NorouziSaint-Cast, PierrePierreSaint-CastWeber, JulianJulianWeberMeier, S.S.MeierWolf, AndreasAndreasWolf2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/40357810.1109/PVSC.2018.8548202We demonstrate a bifaciality of 88.0% for 6-inch bifacial p-type Cz-Si passivated emitter and rear cells (biPERC) and increase their rear side energy conversion efficiency to 18.0% by minor adaptions in the fabrication sequence. We utilize the ""pPassDop"" concept on the cells' rear side that applies an aluminum oxide and a boron-doped silicon nitride (SiN X :B layer stack for simultaneous passivation and doping source. Laser doping forms the local p-doped back surface field regions for these biPERL solar cells. Screen-printed silver-aluminum metallization contacts these regions. We also demonstrate the compatibility of the laser doping approach with conventional (undoped) SiN X capping layer to fabricate biPERL devices with screen-printed contacts.enPhotovoltaikSilicium-PhotovoltaikDotierungDiffusionOberflächen-KonditionierungPassivierungLichteinfangKontaktierungStrukturierungPilotherstellung von industrienahen Solarzellenbifacialityp-type silicon solar cellbiPERCbiPERLPERC621697conference paper