Meissner, P.P.MeissnerPatzak, E.E.Patzak2022-03-022022-03-021986https://publica.fraunhofer.de/handle/publica/174234A semiconductor laser device consisting of an active part monolithically integrated with a passive waveguide and a DBR grating is theoretically investigated. It is shown that for a 2 mm-long device a linewidth below 4 MHz can be achieved. The linewidth does not exceed this value even if the lasing frequency is tuned by several gigahertz. The side-mode suppression remains larger than 30 dB.endistributed bragg reflector lasersintegrated opticslaser modeslaser theoryoptical communication equipmentoptical waveguidessemiconductor junction lasersspectral line breadthdistributed bragg reflector typelinewidthside-mode suppressionintegrated passive waveguidesemiconductor laserdbr grating2 mm-long device621384journal article