Tessmann, AxelAxelTessmannLeuther, ArnulfArnulfLeutherHurm, V.V.HurmMassler, HermannHermannMasslerWagner, SandrineSandrineWagnerKuri, MichaelMichaelKuriZink, MartinMartinZinkRiessle, MarkusMarkusRiessleStulz, Hans-PeterHans-PeterStulzSchlechtweg, M.M.SchlechtwegAmbacher, OliverOliverAmbacher2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38560810.1109/CSICS.2014.6978532In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeterwave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation highresolution imaging systems and communication links operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been developed by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A three-stage amplifier S-MMIC based on compact cascode devices was realized, demonstrating a maximum gain of 22.2 dB at 294 GHz and a small-signal gain of more than 16 dB over the frequency range from 184 to 312 GHz. Finally, mounting and packaging of the monolithic amplifier chip into a WR-3.4 waveguide module was accomplished with only minor reduction in circuit performance.enH-bandmedium power amplifier (MPA)metamorphic high electron mobility transistor (mHEMT)microstrip-to-waveguide transitionpackagingsubmillimeter-wave monolithic integrated circuit (S-MMIC)conference paper