Bürkle, L.L.BürkleFuchs, F.F.FuchsSchmitz, J.J.SchmitzPletschen, WilfriedWilfriedPletschen2022-03-032022-03-032000https://publica.fraunhofer.de/handle/publica/19719010.1063/1.1310167Magnetotransport and photoluminescence (PL) measurements on InAs/(Galn)Sb superlattices (SLs) .grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n-type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs.enInAs/(GaIn)Sb superlatticeInAs/(GaIn)Sb Übergitterinfrared detectorInfrarotdetektorbackground dopingHintergrunddotierung621667journal article