Kallfass, I.I.KallfassSchumacher, H.H.SchumacherBrazil, T.J.T.J.Brazil2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21181710.1109/LMWC.2006.885627The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to a low-noise GaAs pseudomorphic-HEMT (pHEMT) technology as well as its power variant. In terms of topology and parameters, the new expressions resemble the Curtice drain current model. They provide a globally accurate description of nonlinearities in HEMT capacitance.enmodulation-doped field effect transistorsemiconductor device modelingMODFET621667530journal article