Under CopyrightBurenkov, A.A.BurenkovPichler, P.P.PichlerLorenz, J.J.LorenzSpiegel, Y.Y.SpiegelDuchaine, J.J.DuchaineTorregrosa, F.F.Torregrosa2022-03-1127.10.20112011https://publica.fraunhofer.de/handle/publica/37228210.1109/SISPAD.2011.6034962Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1E15 to 1E17 cm-2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.enplasma immersionion implantationsimulation670620530conference paper