Paraskevopoulos, A.A.ParaskevopoulosHensel, H.-J.H.-J.HenselSchelhase, S.S.SchelhaseFrahm, J.J.FrahmKuebler, J.J.KueblerDenker, A.A.DenkerGubenko, A.A.GubenkoPortnoi, E.L.E.L.Portnoi2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/3371412-s2.0-0033723541A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.8 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.en621conference paper