Baureis, P.P.BaureisSeitzer, D.D.SeitzerSchaper, U.U.Schaper2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/31884910.1109/GAAS.1991.172650An improved HBT large signal model has been developed which allows calculation of intrinsic device temperature as a function of the dissipated power. The time dependence of this power effect is evaluated using pulsed on-wafer measurements. The calculated temperatures are proved to be correct by diode drop measurements with a pair of standard transistors. Also, simplified numerical simulations of the three-dimensional heat equations give similiar results. An additional test structure - a broadband amplifier with a Darlington connected pair of transistors - is simulated to predict the intrinsic device temperatures and show reliability under normal operating conditions. Their thermal behavior are confirmed with liquid crystal measurement techniques.enelectrothermal modellingelektrothermische ModellierungGroßsignalmodellHBTlarge signal model006621conference paper