Daves, W.W.DavesKrauss, A.A.KraussHäublein, V.V.HäubleinBauer, A.J.A.J.BauerFrey, L.L.Frey2022-03-112022-03-112012https://publica.fraunhofer.de/handle/publica/37615210.4028/www.scientific.net/MSF.717-720.1089In this work we present 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with a stable protective coating for harsh environment applications. Both inversion channel (IC) and buried channel (BC) MOSFETs were realized on n-4H-SiC substrates with a p-epilayer. Stacked ONO gate dielectric and Ti/TiN/Pt/Ti interconnect were used. Ni and Ti ohmic contacts in combination with a-SiO x/a-SiN y and a-SiO x/a-SiC protective coatings were compared. The MOSFETs showed excellent transistor characteristics up to 600 °C and exceptional stability during long-term aging at 600 °C in air and during accelerated aging at 700 °C including temperature cycling and air/moisture environment.en670conference paper