High-quality SOI-substrates for CMOS transistors

Belz, J.J.BelzBurbach, G.G.BurbachVogt, H.H.VogtZimmer, G.G.Zimmer2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/18002710.1016/0042-207X(91)90059-RIn this paper CMOS transistors with excellent channel mobilities and very low junction leakage will be described. These devices are produced in high-quality silicon-on-insulator (SOI)-substrates with an implanted buried SiO2 insulator. The properties of the buried oxide and its interfaces will be shown.endevicesSIMOX-substratesSOI621533High-quality SOI-substrates for CMOS transistorsjournal article