200 Gb/s Uncooled EML with Single MQW Layer Stack Design

Theurer, MichaelMichaelTheurerKottke, ChristophChristophKottkeFreund, RonaldRonaldFreundGanzer, FelixFelixGanzerRunge, PatrickPatrickRungeMöhrle, MartinMartinMöhrleTroppenz, UteUteTroppenzSigmund, ArianeArianeSigmundSchell, MartinMartinSchell2023-06-292023-06-292022https://publica.fraunhofer.de/handle/publica/4449852-s2.0-85146399863We demonstrate an EML for 200 Gb/s PAM4 modulation at uncooled conditions. The device has an identical MQW layer stack for the DFB, EAM and SOA section, which allows a simple fabrication process. The EML is designed for balanced performance from 20°C to 85°C.en200 Gb/s Uncooled EML with Single MQW Layer Stack Designconference paper