Fritz, J.J.FritzHess, G.G.HessRöttcher, U.U.Röttcher2022-03-082022-03-081986https://publica.fraunhofer.de/handle/publica/314285We present a program for a technology independent parameter extraction of MOS circuits. It provides all necessary algorithms for a detailed layout analysis including the computation of parasitic resistors and capacitors. Special interest is focused on the implementation of parameter extraction from graphic data allowing arbitrary shapes. (IMS)en621conference paper