Rattunde, MarcelMarcelRattundeMermelstein, C.C.MermelsteinSchmitz, J.J.SchmitzKiefer, R.R.KieferPletschen, WilfriedWilfriedPletschenWalther, MartinMartinWaltherWagner, J.J.Wagner2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20168010.1063/1.14819792-s2.0-79956009372Strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting at 1.98 mum at 300 K are investigated with regard to their high-power capability. As the heating of the active region is a limiting factor for these devices, a quantitative model is derived to simulate the performance of these lasers including thermal effects. The standard laser parameters, deduced from measurements on ridge waveguide lasers, and the measured thermal resistance of the mounted devices were then taken as input parameters. The output power and power efficiency of the lasers calculated using the presented model. Good agreement was found between calculated data and the measurements for different heatsink temperatures as well as for different laser geometries and mounting techniques. The maximum output power achieved for p-side down mounted 1000 X 150 mum2 broad-area laser was 1.7 W at 300 K in cw operation.endiode laserDiodenlaserinfrared laserInfrarot-Laserhigh powerhohe LeistungGaInAsSbAlGaAsSbGaSbthermal resistancethermischer Widerstandsimulationpower efficiencyLeistungseffizienz621667journal article