Alsharef, M.M.AlsharefGranzner, R.R.GranznerSchwierz, F.F.SchwierzTure, ErdinErdinTureQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacher2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39392910.1109/ESSDERC.2016.7599615The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar counterpart. Moreover, the RF performance of tri-gate HEMTs with optimized body design can be superior to that of conventional planar devices.encomponentgallium nitrideHEMTtri-gatedevice simulation667conference paper