Belz, J.J.BelzDura, H.-G.H.-G.DuraMokwa, W.W.MokwaVogt, H.H.VogtZimmer, G.G.Zimmer2022-03-082022-03-081990https://publica.fraunhofer.de/handle/publica/317342In this work, we report upon a technique for production of single crystal silicon membranes by the use of buried oxide layers as an etch stop. Fabrication starts with a silicon wafer having (100)-orientation. During oxygen implantation and subsequent high temperature annealing, a thin buried silicon dioxide layer of about 5 micrometer is grown on top. In the first experiment, using silicon nitride as a protection layer, large flat membranes up to 1 qcm could be fabricated. Chosing a sandwich layer of oxide/nitride the membranes were found buckling.enSensorfertigungSilizium-MembranenSIMOX-Anwendungen621conference paper