Hodges, JasonJasonHodgesSchwantuschke, DirkDirkSchwantuschkeRaay, Friedbert vanFriedbert vanRaayBrueckner, PeterPeterBruecknerQuay, RüdigerRüdigerQuayKhandelwal, SourabhSourabhKhandelwal2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/40480410.1109/MWSYM.2019.8700738Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also changes the C-V behaviour of the device. In this paper, for the first time, we present a physics-based compact model which captures the I-V and the C-V characteristics of the device in presence of trapping effects consistently with I-V and C-V modelled using the same set of model formulations and physical model parameters. The developed model shows excellent agreement to the measured data. The importance of a consistent I-V and C-V model is also shown.engallium nitride (GaN)high electron mobility transistor (HEMT)charge trappingpulsed I-Vpulsed S-parameter667conference paper