Haberger, K.K.HabergerPanish, P.P.PanishBuchner, R.R.BuchnerSeegebrecht, P.P.Seegebrecht2022-03-082022-03-081988https://publica.fraunhofer.de/handle/publica/315277MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements. (IFT)en3D-IntegrationCMOS ProzeßLaserkristallisationMOS TransistorPoly-Siliziumconference paper