Weber, RainerRainerWeberLeuther, ArnulfArnulfLeutherLozar, RogerRogerLozarMassler, HermannHermannMassler2022-03-142022-03-142021https://publica.fraunhofer.de/handle/publica/410126In this paper, a compact low noise amplifier (LNA) circuit is presented, which was designed to be co-integrated in a multi-chip radar system covering the entire H-band (220-325 GHz). It consists of three cascode stages with a total gate width of 78 mm and is realized in a thin-film microstrip line environment on a 35 nm mHEMT process. The circuit demonstrates a flat gain of approximately 22 dB over the entire H-band and a noise figure of 6.2 dB. Not common for HEMT-based voltage controlled active devices is the capability of a constant current bias control with a single supply voltage of 3.3 V which leads to a homogeneous performance over the wafer compared to the common biasing method using only voltage sources.enlow-noise amplifier (LNA)H-band (220-325 GHz)metamorphic high electron mobility transistor (mHEMT)noise figure (NF)monolithic millimeter-wave integrated circuit (MMIC)thin-film microstrip transmission line (TF-MSL)667conference paper