Wandel, K.K.WandelHöhmann, P.P.HöhmannJaniak, K.K.JaniakLook, J. vanJ. vanLook2022-03-102022-03-102004https://publica.fraunhofer.de/handle/publica/346723Periodic nanostructures in InP based epitaxial layers for photonic bandgap materials have to be drilled deep into the substrate for high performance devices. We investigated dry etching using an inductively coupled plasma reactive ion etcher (ICP-RIE) and chemically assisted ion beam etching (CAIBE) for holes in the 300 nm range. Optical measurements on defect waveguides are compared.en621conference paper