Under CopyrightSteffens, MichaelMichaelSteffensHöffgen, StefanStefanHöffgenKündgen, TobiasTobiasKündgenPaschkowski, EikeEikePaschkowskiPoizat, MarcMarcPoizatWölk, DorotheaDorotheaWölk2022-03-1410.1.20202019https://publica.fraunhofer.de/handle/publica/40615410.24406/publica-fhg-406154We present single event tests performed on silicon carbide power devices (MOSFET, JFET, Schottky diodes). The data were taken across four campaigns with heavy ions up to Krypton at the Heavy Ion Facility, UCL, Louvain-la-Neuve, with Xenon ions at the G4 cave GANIL, Caen, with ultra-energetic Xenon at the H8 beamline at CERN and 45 MeV protons at the JULIC cyclotron, research centre Jülich. Throughout all tests the devices showed a high sensitivity to destructive single event induced failures even at low LETs or protons and significant derating.enradiation effectssingle event effectsSEBSEGRsilicon carbideSiCSiC Schottky diodesSiC MOSFETsSiC JFET620poster