Measurement of shallow arsenic impurity profiles in semiconductor silicon using ToF-SIMS and TXRF

Schwenke, H.H.SchwenkeKnoth, J.J.KnothFabry, L.L.FabryPahlke, S.S.PahlkeScholz, R.R.ScholzFrey, L.L.Frey2022-03-032022-03-031997https://publica.fraunhofer.de/handle/publica/19076510.1149/1.1838122en670620530541Measurement of shallow arsenic impurity profiles in semiconductor silicon using ToF-SIMS and TXRFjournal article