Ralston, J.D.J.D.RalstonLaughton, F.R.F.R.LaughtonChazan, P.P.ChazanLarkins, E.C.E.C.LarkinsMaier, M.M.MaierAbd Rahman, M.K.M.K.Abd RahmanWhite, I.H.I.H.White2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18716410.1049/el:19950451Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structure containing undoped active regions.engallium arsenideHalbleiterlasermodulation dopingModulationsdotierungquantum well laserssemiconductor doping621667384journal article