A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector with Integrated Broadband Bow-Tie Antenna

Bauer, MarisMarisBauerRämer, AdamAdamRämerChevtchenko, Serguei A.Serguei A.ChevtchenkoOsipov, KonstantinKonstantinOsipovCibiraite, DovileDovileCibiraitePralgauskaite, SandraSandraPralgauskaiteIkamas, KestutisKestutisIkamasLisauskas, AlvydasAlvydasLisauskasHeinrich, WolfgangWolfgangHeinrichKrozer, ViktorViktorKrozerRoskos, Hartmut G.Hartmut G.Roskos2022-03-062022-03-062019https://publica.fraunhofer.de/handle/publica/25854810.1109/TTHZ.2019.2917782Many emerging applications in the terahertz (THz)frequency range demand highly sensitive, broadband detectorsfor room-temperature operation. Field-effect transistors with in-tegrated antennas for THz detection (TeraFETs) have proven tomeet these requirements, at the same time offering great potentialfor scalability, high-speed operation, and functional integrability.enbroadband antennafield-effect transistorGaN HEMTplasmonic mixingterahertz (THz) detector003006519A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector with Integrated Broadband Bow-Tie Antennajournal article